AON7702B v ds i d (at v gs =10v) 20a r ds(on) (at v gs =10v) < 9.5m w r ds(on) (at v gs =4.5v) < 14.5m w symbol v ds drain-source voltage 30 srfet tm AON7702B uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) ,and low gate charge. this device is suitable for use as a low side fet in smps, load switching and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v g d s srfet tm s oft r ecovery mos fet : integrated schottky diode top view 1 2 3 4 8 7 6 5 v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc parameter typ max t c =25c 3.1 9 t c =100c junction and storage temperature range -55 to 150 c/w r q ja 30 60 80 40 thermal characteristics units maximum junction-to-ambient a a t a =25c pulsed drain current c continuous drain current g i d 20 15.5 v 20 gate-source voltage drain-source voltage 30 c i dsm a t a =70c continuous drain current 18 13.5 a 19 v t c =25c t c =100c w power dissipation a p dsm w t a =70c 23 2 t a =25c power dissipation b p d avalanche energy l=0.1mh c mj avalanche current c 11 maximum junction-to-case c/w c/w maximum junction-to-ambient a d 4.5 75 5.4 www.freescale.net.cn 1/7 30v n-channel mosfet general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =125c 100 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v i d(on) 80 a 7.6 9.5 t j =125c 12.6 15.5 11.6 14.5 m w g fs 25 s v sd 0.4 0.7 v i s 20 a c iss 810 pf c oss 135 pf c rss 100 pf r g 1.3 2.5 3.7 w q g (10v) 17 24 nc q g (4.5v) 8.5 12 nc q gs 2.3 nc q gd 4.5 nc t d(on) 4 ns t 3 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =13.5a gate source charge gate drain charge total gate charge turn-on rise time v =10v, v =15v, r =1.2 w , zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =13.5a v gs =4.5v, i d =11a forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =10ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =13.5a r ds(on) static drain-source on-resistance i dss ma v ds =v gs i d =250 m a v ds =0v, v gs =20v t r 3 ns t d(off) 23 ns t f 5 ns t rr 5 ns q rr 4.3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =13.5a, di/dt=500a/ m s turn-on rise time turn-off delaytime i f =13.5a, di/dt=500a/ m s v gs =10v, v ds =15v, r l =1.2 w , r gen =3 w turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign, and the maximum temperature of 150 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/7 AON7702B 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 10 20 30 40 50 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 4 6 8 10 12 14 16 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =11a v gs =10v i d =13.5a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 4v 10v 3.5v 4.5v 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 30 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =13.5a 25 c 125 c www.freescale.net.cn 3/7 AON7702B 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =15v i d =13.5a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 40 (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse safe operating area (note f) r q jc =5.4 c/w www.freescale.net.cn 4/7 AON7702B 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 5 10 15 20 25 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 14: current de - rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =75 c/w www.freescale.net.cn 5/7 AON7702B 30v n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 12 0 5 10 15 20 0 5 10 15 20 25 30 i rm (a) q rr (nc) i s (a) figure 18: diode reverse recovery charge and peak di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 0 1 2 3 4 5 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 s t rr (ns) i s (a) figure 19: diode reverse recovery time and di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 i r (a) temperature (c) figure 17: diode reverse leakage current vs. junction temperature v ds =15v v ds =30v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 50 100 150 200 v sd (v) temperature (c) figure 18: diode forward voltage vs. junction temperature i s =1a 10a 20a 5a figure 18: diode reverse recovery charge and peak current vs. conduction current 0 2 4 6 8 10 0 2 4 6 8 10 0 200 400 600 800 1000 i rm (a) q rr (nc) di/dt (a/ m mm m s) figure 20: diode reverse recovery charge and peak current vs. di/dt 125oc 125oc 25oc 25oc i s =13.5a q rr i rm figure 19: diode reverse recovery time and softness factor vs. conduction current 0 1 2 3 4 5 0 2 4 6 8 10 0 200 400 600 800 1000 s t rr (ns) di/dt (a/ m mm m s) figure 21: diode reverse recovery time and softness factor vs. di/dt 125oc 25oc 25oc 125oc i s =13.5a t rr s www.freescale.net.cn 6/7 AON7702B 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 7/7 AON7702B 30v n-channel mosfet
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